Characterization of Ge-Sb-Te based film by MOCVD for phase change memory application = 상변화 메모리 소자 응용을 위한 MOCVD를 이용한 Ge-Sb-Te계 박막의 증착 및 특성분석

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 333
  • Download : 0
In the early 1960s, new reversible phase change materials and electrically and optically programmable devices were reported, and these devices were proposed for use in digital computers as non-volatile memory. 650 MByte PD and CD-RW disks and 5.2 GByte DVD-RAM optical memory disks using a laser-induced structural phase change in a chalcogenide alloy are now in production. Recently, strong interest has focused on the Ge-Sb-Te alloy materials, especially $Ge_2Sb_2Te_5$ for phase change random access memory (PRAM), because PRAM is most appropriate to the requirements such as nonvolatile, fast speed, high endurance among the next generation memories. PRAM technologies using GST thin films are based upon the reversible switching between the amorphous and the crystalline phase. According to the phase change from amorphous to crystalline phase, GST thin films have very different optical and electrical properties. In the last years, extensive experimental studies have been conducted to understand the crystallization phenomena. The important issues in PRAM are low writing current, endurance and so on. The writing current flows from TEC through GST to BEC and the phase transition occurs at around the BEC-GST interface. The writing current is mainly determined by contact size between phase change material and BEC. Reduced contact size increases the local current density and joule heating in GST material. The induced heat is directly dependent on current density. So, the contact size of the BEC to GST is very decisive factors. To fabricate the small contact size of the BEC to GST, we need the C thin films by sputtering, thermal evaporation, and pulsed laser deposition was already demonstrated. Generally, chemical vapor deposition (CVD) is a process whereby a solid material is deposited from a vapor by a chemical reaction occurring on or in the vicinity of a normally heated substrate surface. CVD is employed in many thin film applications. Among various deposition te...
Advisors
Kim, Ho-Giresearcher김호기researcher
Description
한국과학기술원 : 신소재공학과,
Publisher
한국과학기술원
Issue Date
2008
Identifier
303601/325007  / 020045021
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2008. 8., [ viii, 135 p. ]

Keywords

PRAM; MOCVD; Ge-Sb-Te; 상변화메모리; 칼코게나이드

URI
http://hdl.handle.net/10203/49705
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=303601&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0