Structural properties and growth mechanism of antimony (Sb)-based Ⅲ-Ⅴ compound semiconductors = Antimony (Sb)-based Ⅲ-Ⅴ 화합물 반도체의 구조적 특성과 성장 기구

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The antimony (Sb)-based III-V compound semiconductors are excellent candidates for high-speed and low-power electronic devices for data processing, communication, imaging, sensing, and particularly portable equipments. Specially, Sb-based heterostructures formed from III-V compound semiconductors with the nearly lattice-matched $6.1 \mbox{\AA}$ as lattice constant (GaSb, AlSb, InAs, and related alloys) have attracted significant interest because of their enormous flexibility. These applications of Sb-based III-V compound semiconductors require the control of structural and electronic properties at nanometer scale. Sb-based quantum heterostructures with narrow layers provide significant challenge to molecular beam epitaxy (MBE) growth technology, conventional materials characterization techniques, heterostructure physics and device modeling. However, unfortunately, none of the binary and few of the ternary Sb-based compound semiconductors are lattice matched to GaAs and/or InP. There are few reports on the studies of Sb-based III-V compound semiconductors on silicon (Si) substrate due to a large mismatch in comparison with arsenides, nitrides, and phosphides. In addition, the growth of Sb-based compound semiconductors on Si substrate causes the generation of defects by polar/non-polar system, such as antiphase domain boundary (ADB). In this dissertation, the growth behavior of the Sb-based III-V compound semiconductors on Si and GaAs substrates by MBE method and their structural properties were covered to achieve a high-quality Sb-based heterostructures. Specifically, the role of buffer system and the growth mechanism of polar materials on polar (GaAs) and/or non-ploar (Si) substrates were detailedly studied from a structural viewpoint using transmission electron microscopy (TEM). Structural properties and growth mechanism of gallium antimonide (GaSb) on Si and GaAs substrate were studied in chapter 3. Specifically, a role of low-temperature (LT) AlSb buffe...
Lee, Jeong-Yongresearcher이정용researcher
한국과학기술원 : 신소재공학과,
Issue Date
263465/325007  / 020035054

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2007.2, [ xxii, 290 p. ]


Antimony (Sb)-based Ⅲ-Ⅴ Compound Semiconductors; Antimony (Sb)-based Ⅲ-Ⅴ 화합물 반도체

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