DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Chang, Kee-Joo | - |
dc.contributor.advisor | 장기주 | - |
dc.contributor.author | Jwa, Sang-Hun | - |
dc.contributor.author | 좌상훈 | - |
dc.date.accessioned | 2011-12-14T07:59:09Z | - |
dc.date.available | 2011-12-14T07:59:09Z | - |
dc.date.issued | 2009 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=308627&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/48738 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 물리학과, 2009.2, [ vi, 21 p. ] | - |
dc.description.abstract | The atomic structure and electronic properties of various defects consisting of B and C atoms in Si predoped with C impurities are investigated through first-principles density-functional calculations. In the absence of Si self-interstitials ($I_s$), substitutional B and C atoms interact repulsively with each other, implying that B-C pairs at neighboring substitutional sites do not play a role in the retardation of B diffusion. After examining various configurations for a $I_s-B-C$ complex, which can be formed in the excess of self-interstitials, it is found that a C-B split-interstitial, where the B and C atoms share a single lattice site along the [100] axis, is the most stable defect. For several diffusion pathways, along which the B dopant diffuses from the C-B split-interstitial complex with [100] orientation to nearby tetrahedral and hexagonal sites, very high migration energies of about 3 eV are calculated, which indicate that the diffusing B atom can be easily trapped in the neighborhood of C. The range of the C trap potential is estimated to be about 7 $\AA$. These results suggest that the suppression of B diffusivity in the presence of C is attributed to the formation of C-B split-interstitial complexes, in addition to the reduction of self-interstitials, which are available for B diffusion. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Diffusion | - |
dc.subject | Boron | - |
dc.subject | Carbon | - |
dc.subject | 확산 | - |
dc.subject | 붕소 | - |
dc.subject | 탄소 | - |
dc.title | First-principles study on the diffusion of B dopants in C-predoped Si | - |
dc.title.alternative | 탄소 원자가 주입된 실리콘 반도체에서 B 확산에 대한 제일원리 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 308627/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020073561 | - |
dc.contributor.localauthor | Jwa, Sang-Hun | - |
dc.contributor.localauthor | 좌상훈 | - |
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