DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Chang, Kee-Joo | - |
dc.contributor.advisor | 장기주 | - |
dc.contributor.author | Noh, Hyeon-Kyun | - |
dc.contributor.author | 노현균 | - |
dc.date.accessioned | 2011-12-14T07:59:09Z | - |
dc.date.available | 2011-12-14T07:59:09Z | - |
dc.date.issued | 2009 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=308626&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/48737 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 물리학과, 2009.2, [ v, 20 p. ] | - |
dc.description.abstract | In this research, the amorphous phase of $HfSiO_4$ is generated using the molecular dynamics simulation based on the first-principles calculations, and the atomic and electonic structures are investigated. The local bonding structures of the O atoms can be classified as the $SiO_2$-like, mixed, and $HfO_2$-like bonds by the number of Hf and Si atoms in the neighborhood. The bond lengths of Si-O and Hf-O are about 1.66 and 2.14 $\AA$, respectively and the coordination numbers are evaluated to about 4.02, 2.66, and 6.25 for Si, O, and Hf atoms, respectively. O-vacancy in a-$HfSiO_4$ can be also categorized by the number of Hf and Si atoms near the vacancy site : the Si-related, mixed, and Hf-related defects. For the Si- and Hf-related defects, the defect levels are about 0.56 and 2.59 eV, and the formation energies are about 4.89 and 6.12 eV, espectively. From the analysis of the defect levels of O-vacancies, the threshold voltage shift mechanism in p-channel metal-oxide-semiconductor (PMOS) devices can be explained, and the Hf-related defects mainly play the critical role in that mechanism. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | first-principles | - |
dc.subject | amorphous | - |
dc.subject | Hf-silicates | - |
dc.subject | gate oxide | - |
dc.subject | MOS devices | - |
dc.subject | 제일원리 | - |
dc.subject | 비정질 | - |
dc.subject | 하프늄 실리케이트 | - |
dc.subject | 게이트 산화막 | - |
dc.subject | MOS 소자 | - |
dc.title | First-principles study of oxygen vacancy in amorphous hafnium silicates | - |
dc.title.alternative | 비정질 하프늄 실리케이트 구조 내에서의 산소 결핍 결함에 관한 제일원리 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 308626/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020073155 | - |
dc.contributor.localauthor | Noh, Hyeon-Kyun | - |
dc.contributor.localauthor | 노현균 | - |
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