SIFIS Josephson junction qubit = 초전도체-강자성체 조셉슨 접합을 이용한 양자 비트 시스템 제안

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dc.contributor.advisorSim, Heung-Sun-
dc.contributor.advisor심흥선-
dc.contributor.authorNoh, Tae-Wan-
dc.contributor.author노태완-
dc.date.accessioned2011-12-14T07:58:54Z-
dc.date.available2011-12-14T07:58:54Z-
dc.date.issued2008-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=296148&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/48722-
dc.description학위논문(석사) - 한국과학기술원 : 물리학과, 2008.2, [ iv, 43 p. ]-
dc.description.abstractWe propose a voltage-controlled superconducting SIFIS junction qubit consisting of the $0$ and $\pi$ phase states of the junction. Quantum tunneling due to the charging energy of insulating barrier (I) leads to coherent superposition of two states. Controlled by gate voltage on the ferromagnetic layer (F) the qubit can be operated by either non-adiabatic voltage pulses or alternating-voltage-driven Rabi-type oscillation at the degeneracy point. This qubit is robust against the decoherence due to both the magnetic microwave field and charge fluctuations. We introduce a scalable design for measurement of qubit states, switching function, controllable coupling, and Bell state formation.eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectSIFIS junction-
dc.subjectQubit-
dc.subjectpi state-
dc.subject조셉슨 접합-
dc.subject양자 비트-
dc.subjectpi 상태-
dc.titleSIFIS Josephson junction qubit = 초전도체-강자성체 조셉슨 접합을 이용한 양자 비트 시스템 제안-
dc.typeThesis(Master)-
dc.identifier.CNRN296148/325007 -
dc.description.department한국과학기술원 : 물리학과, -
dc.identifier.uid020063156-
dc.contributor.localauthorNoh, Tae-Wan-
dc.contributor.localauthor노태완-
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PH-Theses_Master(석사논문)
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