SIFIS Josephson junction qubit초전도체-강자성체 조셉슨 접합을 이용한 양자 비트 시스템 제안

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We propose a voltage-controlled superconducting SIFIS junction qubit consisting of the $0$ and $\pi$ phase states of the junction. Quantum tunneling due to the charging energy of insulating barrier (I) leads to coherent superposition of two states. Controlled by gate voltage on the ferromagnetic layer (F) the qubit can be operated by either non-adiabatic voltage pulses or alternating-voltage-driven Rabi-type oscillation at the degeneracy point. This qubit is robust against the decoherence due to both the magnetic microwave field and charge fluctuations. We introduce a scalable design for measurement of qubit states, switching function, controllable coupling, and Bell state formation.
Advisors
Sim, Heung-Sunresearcher심흥선researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
2008
Identifier
296148/325007  / 020063156
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 2008.2, [ iv, 43 p. ]

Keywords

SIFIS junction; Qubit; pi state; 조셉슨 접합; 양자 비트; pi 상태

URI
http://hdl.handle.net/10203/48722
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=296148&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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