DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Chang, Kee-Joo | - |
dc.contributor.advisor | 장기주 | - |
dc.contributor.author | Kim, Dae-Yeon | - |
dc.contributor.author | 김대연 | - |
dc.date.accessioned | 2011-12-14T07:58:32Z | - |
dc.date.available | 2011-12-14T07:58:32Z | - |
dc.date.issued | 2006 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=255223&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/48699 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 물리학과, 2006.2, [ iv, 22 p. ] | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 역치전압 | - |
dc.subject | 하프늄 옥사이드 | - |
dc.subject | 제일원리 연구 | - |
dc.subject | High-k | - |
dc.subject | HfO₂ | - |
dc.subject | Fermi level pinning | - |
dc.subject | Threshold voltages | - |
dc.subject | First-principles study | - |
dc.title | First-principles study of defect properties of Si impurities in $HfO_2$ | - |
dc.title.alternative | $HfO_2$에 Si 불순물의 결함특성에 대한 제일 원리 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 255223/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020043063 | - |
dc.contributor.localauthor | Kim, Dae-Yeon | - |
dc.contributor.localauthor | 김대연 | - |
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