First-principles study of defect properties of Si impurities in $HfO_2$ = $HfO_2$에 Si 불순물의 결함특성에 대한 제일 원리 연구

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Advisors
Chang, Kee-Jooresearcher장기주researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
2006
Identifier
255223/325007  / 020043063
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 2006.2, [ iv, 22 p. ]

Keywords

역치전압; 하프늄 옥사이드; 제일원리 연구; High-k; HfO₂; Fermi level pinning; Threshold voltages; First-principles study

URI
http://hdl.handle.net/10203/48699
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=255223&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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