Optical gain at 1.54um in nanocrystal Si sensitized, Er-doped silica waveguide using top-pumping 470nm LED470nm LED르를 이용한 어븀이 첨가된 실리콘 나노결정 광도파로에서의 1540nm 증폭

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dc.contributor.advisorShin, Jung-H.-
dc.contributor.advisor신중훈-
dc.contributor.authorLee, Jin-Ku-
dc.contributor.author이진구-
dc.date.accessioned2011-12-14T07:58:13Z-
dc.date.available2011-12-14T07:58:13Z-
dc.date.issued2004-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=240283&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/48680-
dc.description학위논문(석사) - 한국과학기술원 : 물리학과, 2004.8, [ v, 35 p. ]-
dc.description.abstractOptical gain from Erbium doped Silicon Rich Silicon Oxide(SRSO) optical waveguide amplifier top-pumped with an 470nm visible LED array is investigated. Er doped SRSO thin films, which consist of Si nanoclusters embedded inside a SiO$_2$ matrix, were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition with co-sputtering of erbium target using SiH$_4$ and O$_2$ as source gases. After deposition, the samples were rapid thermal annealed at 950 ℃ for 5 min in order to precipitate the excess Si atoms into nc-Si. The Composition of waveguide amplifier is 1 at.% excess Si and ~ 0.06 at.% Er. The presence of nc-Si raises the refractive index of the material to 1.46, automatically providing the refractive index contrast necessary for waveguiding. Thus, ridge-type, single-mode waveguides were formed by defining 1.1 cm long, 9 ㎛ width, 0.3 ㎛ high ridges using photolithography and buffered oxide etching process, followed by mechanical polishing. Optical absorption measurements indicate Er-related absorption of ~ 3dB/cm, consistent with increased Er absorption cross-section by nc-Si. Signal enhancement was observed when the waveguide was pumped from the top using a 470nm visible LED array. simulation of high pump power using 477nm line of an Ar laser showed signal enhancement of 3dB/cm, indicating full inversion.eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectSi sensitized-
dc.subjectEr-doped silica waveguidestetetic field dependancepulse-
dc.subject자기장에 대한 이력특성 연구-
dc.subject실리콘 나노결정 광도파로임계전류-
dc.titleOptical gain at 1.54um in nanocrystal Si sensitized, Er-doped silica waveguide using top-pumping 470nm LED-
dc.title.alternative470nm LED르를 이용한 어븀이 첨가된 실리콘 나노결정 광도파로에서의 1540nm 증폭-
dc.typeThesis(Master)-
dc.identifier.CNRN240283/325007 -
dc.description.department한국과학기술원 : 물리학과, -
dc.identifier.uid020023493-
dc.contributor.localauthorLee, Jin-Ku-
dc.contributor.localauthor이진구-
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PH-Theses_Master(석사논문)
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