DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Shin, Jung-H. | - |
dc.contributor.advisor | 신중훈 | - |
dc.contributor.author | Cha, Dai-Gil | - |
dc.contributor.author | 차대길 | - |
dc.date.accessioned | 2011-12-14T07:57:31Z | - |
dc.date.available | 2011-12-14T07:57:31Z | - |
dc.date.issued | 2003 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=179988&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/48637 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 물리학과, 2003.2, [ vi , 29 p. ] | - |
dc.description.abstract | Ever since the report on the luminescence of porous Si by Canham , the study of luminescent nanocrystalline Si (nc-Si) has been an extremely active field of research. In this thesis, we have discussed the effect of the excimer laser annealing and the Ni , which have been used in producing low temperature poly Si, on the formation of luminescent nanocrystal Si (nc-Si) embedded in Si/$SiO_2$ superlattice. Ni co-doped and Ni undoped amorphous Si/$SiO_2$ superlattices consist of 20 periods of 2nm thin Si layers and 5 nm thin $SiO_2$ layers. They were deposited on Si using electron cyclotron resonance plasma enhanced chemical vapor deposition, Ni co-doping was done with concurrent sputtering Ni. A thermal anneal of Ni undoped supelattice film at 1100℃ resulted in a weak nc-Si luminescence. Excimer laser anneal of the as-deposited Ni undoped superlattice film did not result in any nc-Si luminescence even though the energy density was sufficient to melt the Si layers. Excimer laser anneal following the thermal anneal resulted in a three-fold increase of the nc-Si luminescence intensity but a redshift of the luminescence peak by only 30 meV. The temperature dependence of the nc-Si luminescence spectra shape, lifetime, and intensity indicate that the primary effect of excimer laser anneal is the removal of defects and amorphous regions in thermally crystallized Si layers. And a thermal anneal of Ni co-doped superlattice film resulted in a two fold increase of the nc-Si luminescence intensity but a redshift of the luminescence peak by 100 meV. The temperature dependence of the nc-Si luminescence spectra lifetime and intensity indicate that the Ni increase crystal growth rate. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Si nanocrystal | - |
dc.subject | Si nanocrystal | - |
dc.title | Enhanced formation of luminescent nanocrystal Si embedded in $Si/SiO_2$ superlattice | - |
dc.title.alternative | $Si/SiO_2$ 초격자에서 발광 nanocrystal Si 형성의 증진 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 179988/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020013595 | - |
dc.contributor.localauthor | Cha, Dai-Gil | - |
dc.contributor.localauthor | 차대길 | - |
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