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Results 1-4 of 4 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

Nahm, Ho-Hyunresearcher; Kim, Yong-Sung; Kim, Dae Hwan, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.249, pp.1277 - 1281, 2012-06

2
Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberration-corrected scanning transmission electron microscopy study

Park, Yun Chang; Kim, Young Heon; Nahm, Ho-Hyunresearcher; Noh, Ji-Young; Kim, Yong-Sung; Kim, Joondong; Lee, Won Seok; Yang, Jun-Mo; Park, Jeonghee, APPLIED PHYSICS LETTERS, v.102, 2013-01

3
Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors

Noh, Ji-Young; Kim, Hanchul; Nahm, Ho-Hyunresearcher; Kim, Yong-Sung; Kim, Dae Hwan; Ahn, Byung-Du; Lim, Jun-Hyung; Kim, Gun Hee; Lee, Je-Hun; Song, Junho, JOURNAL OF APPLIED PHYSICS, v.113, 2013-05

4
Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity

Nahm, Ho Hyunresearcher; Park, CH; Kim, Yong-Sung, SCIENTIFIC REPORTS, v.4, 2014

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