| 1 | Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature Kim, Kyung Joong; Kim, Jeong Won; Yang, Moon-Seung; Shin, JungHoon, PHYSICAL REVIEW B, v.74, no.15, 2006-10 |
| 2 | Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er-Er energy migration Kim, In Yong; Shin, JungHoon; Kim, Kyung Joong, APPLIED PHYSICS LETTERS, v.95, no.22, 2009-11 |
| 3 | The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering Ji-Hong Jhe; Shin, JungHoon; Kyung Joong Kim; Dae Won Moon, APPLIED PHYSICS LETTERS, v.82, no.25, pp.4489 - 4491, 2003-06 |
| 4 | Exciton-erbium coupling and the excitation dynamics of Er3+ in erbium-doped silicon-rich silicon oxide Seo, SY; Shin, JungHoon, APPLIED PHYSICS LETTERS, v.78, no.18, pp.2709 - 2711, 2001-04 |
| 5 | Optical activation of Si nanowires by Er3+ doped binary Si-Al oxides films derived from sol-gel solutions Ren, LL; Jeung, WY; Han, HC; Suh, K; Shin, JungHoon; Choi, HJ, OPTICAL MATERIALS, v.30, pp.497 - 501, 2007-11 |
| 6 | Large-scale fabrication of single-phase Er2SiO5 nanocrystal aggregates using Si nanowires Suh, Ki-Seok; Shin, Jung-Hoon; Seo, Seok-Jun; Bae, Byeong-Soo, APPLIED PHYSICS LETTERS, v.89, pp.1751 - 1759, 2006-11 |
