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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature Kim, Kyung Joong; Kim, Jeong Won; Yang, Moon-Seung; Shin, JungHoon, PHYSICAL REVIEW B, v.74, no.15, 2006-10 | |
| Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er-Er energy migration Kim, In Yong; Shin, JungHoon; Kim, Kyung Joong, APPLIED PHYSICS LETTERS, v.95, no.22, 2009-11 | |
| Effect of nitride passivation on the visible photoluminescence from Si-nanocrystals Moon-Seung Yang; Kwan-Sik Cho; Ji-Hong Jhe; Se-Young Seo; Shin, JungHoon; Kyung Joong Kim; Dae Won Moon, APPLIED PHYSICS LETTERS, v.85, pp.3408 - 3410, 2004-10 | |
| 1.54 mu m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide Han, HS; Seo, SY; Shin, JungHoon; Kim, DS, JOURNAL OF APPLIED PHYSICS, v.88, no.4, pp.2160 - 2162, 2000-08 | |
| Effect of surface passivants on the photoluminescence from Si nanocrystals Yang, MS; Shin, JungHoon; Kim, KJ, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, pp.1291 - 1296, 2006-06 | |
| Cavity Q measurements of silica microspheres with nanocluster silicon active layer Sung, JY; Tewary, A; Brongersma, ML; Shin, JungHoon, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.12, pp.1388 - 1393, 2006-11 | |
| Nd3+ photoluminescence and its implication on the excitation mechanisms of Nd3+ in Nd doped hydrogenated amorphous silicon alloyed with carbon Mebratu, GK; Kim, MJ; Shin, JungHoon, JOURNAL OF NON-CRYSTALLINE SOLIDS, v.347, pp.279 - 284, 2004-11 | |
| Effects of erbium concentration on the band tail states of Er-doped hydrogenated amorphous silicon Kim, AJ; Kallo, MG; Shin, JungHoon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.333 - 336, 2001-12 | |
| Performance analysis of nanocluster-Si sensitized Er-doped waveguide amplifier using top-pumped 470nm LED Lee, Hansuek; Shin, JungHoon; Park, Namkyoo, OPTICS EXPRESS, v.13, pp.9881 - 9889, 2005-11 | |
| The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering Ji-Hong Jhe; Shin, JungHoon; Kyung Joong Kim; Dae Won Moon, APPLIED PHYSICS LETTERS, v.82, no.25, pp.4489 - 4491, 2003-06 |
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