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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Self-organized growth of Si/Silica/Er2Si2O7 core-shell nanowire heterostructures and their luminescence Choi, HJ; Shin, JungHoon; Suh, K; Seong, HK; Han, HC; Lee, JC, NANO LETTERS, v.5, pp.2432 - 2437, 2005-12 | |
| Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er-Er energy migration Kim, In Yong; Shin, JungHoon; Kim, Kyung Joong, APPLIED PHYSICS LETTERS, v.95, no.22, 2009-11 | |
| Erbium-thulium interaction in broadband infrared luminescent silicon-rich silicon oxide Seo, SY; Shin, JungHoon; Bae, BS; Park, N; Penninkhof, JJ; Polman, A, APPLIED PHYSICS LETTERS, v.82, pp.3445 - 3447, 2003-05 | |
| Er-doped hydrogenated amorphous silicon: structural and optical properties Kim, MJ; Mebratu, GK; Sung, JY; Shin, JungHoon, JOURNAL OF NON-CRYSTALLINE SOLIDS, v.315, no.3, pp.312 - 320, 2003-01 | |
| Optical gain at 1.54 mu m in erbium-doped silicon nanocluster sensitized waveguide Han, HS; Seo, SY; Shin, JungHoon, APPLIED PHYSICS LETTERS, v.79, no.27, pp.4568 - 4570, 2001-12 | |
| 1.54 mu m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide Han, HS; Seo, SY; Shin, JungHoon; Kim, DS, JOURNAL OF APPLIED PHYSICS, v.88, no.4, pp.2160 - 2162, 2000-08 | |
| Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier Han, HS; Seo, SY; Shin, JungHoon; Park, N, APPLIED PHYSICS LETTERS, v.81, no.20, pp.3720 - 3722, 2002-11 | |
| Effects of erbium concentration on the band tail states of Er-doped hydrogenated amorphous silicon Kim, AJ; Kallo, MG; Shin, JungHoon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.333 - 336, 2001-12 | |
| Enhancement of Er3+ Luminescence from Er-doped Hydrogenated Amorphous Silicon by Carbon Co-doping Mebratu G.K.; Kim M.J.; Shin, JungHoon, JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1: REGULAR PAPERS & SHORT NOTES, v.43, no.2, pp.444 - 448, 2004-02 | |
| The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering Ji-Hong Jhe; Shin, JungHoon; Kyung Joong Kim; Dae Won Moon, APPLIED PHYSICS LETTERS, v.82, no.25, pp.4489 - 4491, 2003-06 |
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