DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Shin, Jung-H. | - |
dc.contributor.advisor | 신중훈 | - |
dc.contributor.author | Cho, Kwan-Sik | - |
dc.contributor.author | 조관식 | - |
dc.date.accessioned | 2011-12-14T07:56:59Z | - |
dc.date.available | 2011-12-14T07:56:59Z | - |
dc.date.issued | 2002 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=173542&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/48605 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 물리학과, 2002.2, [ iv, 29 p. ] | - |
dc.description.abstract | Er-doped Si/$SiO_2$ superlattices thin films are deposited by electron cyclotron resonance-plasma enhanced chemical vapor deposition method with co-sputtering of Er-target. $Er^{3+}$ ions in such superlattices can be excited by carriers showing efficient excitation of $Er^{3+}$ ions. As Si layer thickness decreases $Er^{3+}$ luminescence increases due to band gap widening by confinement effect of Si nanoslabs. Due to increase of Er separated from Si layer, $Er^{3+}$ luminescence intensity increases as $SiO_2$ layers thickness increases. Finally, we fabricate diode structure using such films for application. The implication of results will be also discussed. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | superlattice | - |
dc.subject | Er | - |
dc.subject | 어븀 | - |
dc.subject | 초격자 | - |
dc.title | (The) effects of varying Si and $SiO_2$ layer thickness on $Er^{3+}$ luminescence in Er doped $Si/SiO_2$ superlattices | - |
dc.title.alternative | 어븀이 도핑된 실리콘/실리카 초격자에서 실리콘 실리카층의 두께 변화가 어븀 광발광에 미치는 영향 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 173542/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020003520 | - |
dc.contributor.localauthor | Cho, Kwan-Sik | - |
dc.contributor.localauthor | 조관식 | - |
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