(The) effects of varying Si and $SiO_2$ layer thickness on $Er^{3+}$ luminescence in Er doped $Si/SiO_2$ superlattices = 어븀이 도핑된 실리콘/실리카 초격자에서 실리콘 실리카층의 두께 변화가 어븀 광발광에 미치는 영향

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Er-doped Si/$SiO_2$ superlattices thin films are deposited by electron cyclotron resonance-plasma enhanced chemical vapor deposition method with co-sputtering of Er-target. $Er^{3+}$ ions in such superlattices can be excited by carriers showing efficient excitation of $Er^{3+}$ ions. As Si layer thickness decreases $Er^{3+}$ luminescence increases due to band gap widening by confinement effect of Si nanoslabs. Due to increase of Er separated from Si layer, $Er^{3+}$ luminescence intensity increases as $SiO_2$ layers thickness increases. Finally, we fabricate diode structure using such films for application. The implication of results will be also discussed.
Advisors
Shin, Jung-H.researcher신중훈researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
2002
Identifier
173542/325007 / 020003520
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 2002.2, [ iv, 29 p. ]

Keywords

superlattice; Er; 어븀; 초격자

URI
http://hdl.handle.net/10203/48605
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=173542&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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