(The) effects of microcavity on nanocrystal Si luminescence = 마이크로 공진기가 나노크리스탈 실리콘의 발광에 미치는 효과

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We have realized $Si/SiO_2$ microcavity consisting of λ/2 SRSO active region deposited by ECR-PECVD system and two $Si/SiO_2$ distributed Bragg reflectors deposited by sputter system. Photoluminescence at room temperature reveals an enhancement of the luminescence intensity emitted along the optical axis of the cavity, and a decrease of the FWHM of resonant peak. The intensity of the cavity structures is typically one order of magnitudes higher as compared to structures without cavity. Furthermore, the emission wavelength and the intensity decrease for off-normal detect angles. The change in emission wavelength can be quantitatively described by assuming the on-axis component of the optical wave is resonant with the cavity. These PL enhancement, spectral sharpness, and directionality of the microcavity demonstrate the very high potential of $Si/SiO_2$ microcavities for optoelectronic applications.
Advisors
Shin, Jung-Hoonresearcher신중훈researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
2002
Identifier
173530/325007 / 020003246
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 2002.2, [ iv, 30 p. ]

Keywords

나노크리스탈 실리콘; 광발광; 마이크로 공진기; photoluminescence; nanocrystal silicon; distributed Bragg reflectors; microcavity

URI
http://hdl.handle.net/10203/48593
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=173530&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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