Properties of Er-doped silicon rich silicon oxide for active optical devices = 능동적 광소자 제작을 위한 Er이 도핑된 SRSO박막의 특성연구

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Physical, optical and waveguiding properties about Er doped Silicon Rich Silicon Oxide deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. Samples exhibit luminescences at IR region near 1.54㎛ and visible region with broad peaks at about 420nm and 800nm. Carrier mediated excitation is dominant for the 1.54㎛ luminescence of the samples. Sample has long lifetime more than 7msec and high refractive index more than 2.1. They can guide IR lightwave of 1.3 and 1.54㎛ through deposited layer, which are wavelengthes used for optical fiber communication.
Advisors
Shin, Jung-Hoonresearcher신중훈researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1999
Identifier
151562/325007 / 000973735
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 1999.2, [ v, 30 p. ]

Keywords

Active optical device; 어븀; 실리콘; Er; SRSO; 능동적 광소자; Silicon

URI
http://hdl.handle.net/10203/48500
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=151562&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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