Properties of Er-doped silicon rich silicon oxide for active optical devices

Abstract

Physical, optical and waveguiding properties about Er doped Silicon Rich Silicon Oxide deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. Samples exhibit luminescences at IR region near 1.54㎛ and visible region with broad peaks at about 420nm and 800nm. Carrier mediated excitation is dominant for the 1.54㎛ luminescence of the samples. Sample has long lifetime more than 7msec and high refractive index more than 2.1. They can guide IR lightwave of 1.3 and 1.54㎛ through deposited layer, which are wavelengthes used for optical fiber communication.