Direct wafer fusion of GaAs and InP = 기판 용융에 의한 GaAs 와 InP 기판의 접합 특성 연구

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By using wafer fusion techniques, two 5mm×5mm size lattice-mismatched single-crystal wafers of InP and GaAs are directly-bonded together. After chemical cleaning processes the two wafers are pressed against each other in a graphite sample holder at high temperature (470~700℃) in $H_2$ gas ambient. Uniform bonding is realized and is confirmed by SEM photographs of cross-sectional bonding interface. The bonded wafer does not fall apart even after grinding and polishing processes. Therefore, this wafer fusion technique will be compatible with subsequent fabrication processes. The electrical property of the directly-bonded N-type wafer shows diode-like current-voltage characteristics, implying good electrical contact. The reflectivity of the directly-bonded oxide DBR shows no appreciable optical loss at the bonding interface. The photoluminescence characteristics of the bonded InGaAsP MQW shows slight shift in wavelength, depending on the substarte temperature.
Advisors
Lee, Yong-Heeresearcher이용희researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1998
Identifier
135332/325007 / 000963318
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 1998.2, [ 63 p. ]

Keywords

Direct wafer bonding; 기판용융 접합; BAR

URI
http://hdl.handle.net/10203/48463
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=135332&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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