Optical properties of Er-doped silicon rich silicon oxide(SRSO) films deposited by electron cyclotron resonance-plasma enhanced chemical vapor deposition(ECR-PECVD)

Abstract

1.54㎛ luminescence which has important role in telecommunication, from Er-doped silicon rich silicon oxide films deposited with electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. With negative DC bias, Er target was located in deposition chamber, so, sputtering was allowed during deposition. Samples were prepared on varying silane to oxygen gas ratio and annealing was followed. Especially, Er doped SRSO film(with Q=0.85 after 900℃ annealed) shows the most intense PL. We could know the reasons of this intense luminescence from SRSO:Er are high oxygen content, and efficient excitation by mediated carriers.