First-principles study of the origin of photoluminescences in porous silicon = 제일원리 계산을 이용한 다공질 실리콘의 발광 현상에 관한 연구

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The electronic and optical properties of porous silicon are studied through first-principles pseudopotential calculations within the local-density functional approximation. To find the origin of photoluminescence, H-terminated silicon wells and wires are employed. We find that highly efficient and visible luminescences of porous silicon result from the quantum confinement effect and the surface-related features. Relatively localized states at the surfaces give strong optical transitions. The role of the hydrogen-passivated surfaces is emphasized.
Advisors
Chang, Kee-Jooresearcher장기주researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1994
Identifier
69107/325007 / 000923341
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 1994.2, [ 34 p. ]

URI
http://hdl.handle.net/10203/48333
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=69107&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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