Time-of-flight 테크닉을 이용한 수소화된 비정질 규소 p-i-n 형 다이오드의 배부 전기장 profile 에 관한연구Internal field profile in amorphous hydrogenated silicon p-i-n diode by time-of-flight technique

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dc.contributor.advisor이주천-
dc.contributor.advisorLee, Choo-Chon-
dc.contributor.author홍성주-
dc.contributor.authorHong, Sung-Ju-
dc.date.accessioned2011-12-14T07:50:01Z-
dc.date.available2011-12-14T07:50:01Z-
dc.date.issued1987-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=65601&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/48168-
dc.description학위논문(석사) - 한국과학기술원 : 물리학과, 1987.2, [ [iii], 46 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.titleTime-of-flight 테크닉을 이용한 수소화된 비정질 규소 p-i-n 형 다이오드의 배부 전기장 profile 에 관한연구-
dc.title.alternativeInternal field profile in amorphous hydrogenated silicon p-i-n diode by time-of-flight technique-
dc.typeThesis(Master)-
dc.identifier.CNRN65601/325007-
dc.description.department한국과학기술원 : 물리학과, -
dc.identifier.uid000851454-
dc.contributor.localauthor홍성주-
dc.contributor.localauthorHong, Sung-Ju-
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PH-Theses_Master(석사논문)
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