a-Si:H 박막 트랜지스터에서의 전하 트래핑 효과Charge trapping effects in hydrogenated amorphous silicon thin-film transistors

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dc.contributor.advisor이주천-
dc.contributor.advisorLee, Choo-Chon-
dc.contributor.author허준-
dc.contributor.authorHuh, Joon-
dc.date.accessioned2011-12-14T07:49:58Z-
dc.date.available2011-12-14T07:49:58Z-
dc.date.issued1987-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=65574&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/48165-
dc.description학위논문(석사) - 한국과학기술원 : 물리학과, 1987.2, [ ii, 43 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.titlea-Si:H 박막 트랜지스터에서의 전하 트래핑 효과-
dc.title.alternativeCharge trapping effects in hydrogenated amorphous silicon thin-film transistors-
dc.typeThesis(Master)-
dc.identifier.CNRN65574/325007-
dc.description.department한국과학기술원 : 물리학과, -
dc.identifier.uid000851525-
dc.contributor.localauthor허준-
dc.contributor.localauthorHuh, Joon-
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