Electronic properties of amorphous silicon schottky barrier solar cells

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The various electronic properties of a-Si(H) Schottky barrier solar cells are investigated experimentally. The I-V characteristics of Pd/a-Si(H) Schottky barrier which exhibit nearly similar to those of crystalline Si suggest that current transport is nearly diffusion-limited rather than recombination-limited. The dependence of photo-currents on the wavelength of light shows that only the photo generated carrier in field region can contribute to the photocurrents. This can also be supported by the measurement of monochromatic photo current as a function of reverse bias voltage. Furthermore, the collection efficiency as a function of depletion width show field-dependent form, which suggests that most of photo generation of carriers may be primarily due to field-assisted thermal ionization. Finally, our Pd/a-Si(H) solar cells show that under illumination of ~25 mW (actual sunlight) an open circuit voltage of 460 mV and short circuit current of 0.53 mA/㎠ are measured, respectively. The fill factor is 0.55 and conversion efficiency is 1.6%.
Advisors
Lee, Choo-Chon이주천
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1981
Identifier
62983/325007 / 000791275
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 1981.2, [ [ii], 49 p. ]

URI
http://hdl.handle.net/10203/47990
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=62983&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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