Heteroepitaxy and characterization on InxGa1-xAs(x<0.03)/GaAs and GaAs/Si = InxGa1-xAs(x<0.03)/GaAs/Si 구조의 이종에피 성장과 특성측정

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 299
  • Download : 0
Two kinds of heteroepitaxial systems, $In_xGa_{1-x}$($x<0.03$)/GaAs (one example of pseudo-heteroepitaxies) and GaAs/Si (one example of true heteroepitaxies) have been grown and characterized. $In_xGa_{1-x}As$ epilayers on GaAs substrate, in the range of $0
Advisors
Lee, Choo-Chon이주천
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1989
Identifier
61274/325007 / 000825912
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 물리학과, 1989.8, [ vii, 164 p. ]

URI
http://hdl.handle.net/10203/47777
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=61274&flag=dissertation
Appears in Collection
PH-Theses_Ph.D.(박사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0