Photoreflectance를 이용한 (Al,In)GaAs/GaAs 계에서의 계면구조의 관측과 광학적 특성에 관한 연구 = Observation of interface structure and optical properties of (Al,In)GaAs/GaAs heterojunctions systems

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Advisors
박해용researcherPark, Hae-Yongresearcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1997
Identifier
112582/325007 / 000935410
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 물리학과, 1997.2, [ xi, 112 p. ]

Keywords

High electron mobility transistor(HEMT); Heterojunction; 2-dimensional electron gas(2DEG); Interface structure; Hole-acceptor pair modulation; Photoreflectance

URI
http://hdl.handle.net/10203/47563
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=112582&flag=dissertation
Appears in Collection
PH-Theses_Ph.D.(박사논문)
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