DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Shin, Jung-H. | - |
dc.contributor.advisor | 신중훈 | - |
dc.contributor.author | Yang, Moon-Seung | - |
dc.contributor.author | 양문승 | - |
dc.date.accessioned | 2011-12-14T07:25:22Z | - |
dc.date.available | 2011-12-14T07:25:22Z | - |
dc.date.issued | 2008 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=295303&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/47435 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 물리학과, 2008.2, [ viii, 77 p. ] | - |
dc.description.abstract | Si-nanocluster (nc-Si) luminescence and Er$^{3+}$ luminescence in silicon-rich silicon nitride (SRSN), which consists of nc-Si embedded inside a silicon nitride matrix are investigated. First, we report on the origin of visible light emission by comparing the photoluminescence (PL) properties of SRSN with those of similarly prepared silicon-rich silicon oxide (SRSO), which consists of nc-Si embedded inside a SiO$_2$ matrix. Based on the dependence of PL intensity and peak position on the film compostion, anneal temperature and hydrogenation, we identify that visible luminescence originates from nc-Si. The results indicate that nitride passivation of nc-Si leads to increased PL energy over SRSO. Second, we further investigate the role of nitrogen passivation of nc-Si by continuously tuning the passivating dielectric from pure silicon dioxide through oxynitride to pure silicon nitride while keeping the size of nc-Si and the fabrication procedure constant. We find that the observed nonlinear variation of the nc-Si luminescence peak energy agrees well with theoretical predictions about the effect of oxygen coverage on nc-Si bandgap. Such results support that strain relief by nitride passivation results in suppressing the nc-Si bandgap reduction. Finally, we report on Er$^{3+}$ luminescence in SRSN. We find that nc-Si in Er doped SRSN can act as efficient sensitizers for Er$^{3+}$, allowing off-resonant broadband pumping of Er$^{3+}$. Comparison with a similarly prepared Er doped SRSO shows that nitride offers both more effective nc-Si sensitization and higher optical activation of Er than oxide. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Luminescence | - |
dc.subject | Si nanocluster | - |
dc.subject | Er | - |
dc.subject | Silicon nitride | - |
dc.subject | 발광 | - |
dc.subject | 실리콘 나노클러스터 | - |
dc.subject | 어븀 | - |
dc.subject | 실리콘 나이트라이드 | - |
dc.title | Luminescence of Si nanocluster and Er in silicon-rich silicon nitride | - |
dc.title.alternative | 실리콘 나이트라이드 안에 들어있는 실리콘 나노클러스터와 어븀의 발광특성 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 295303/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 020045151 | - |
dc.contributor.localauthor | Yang, Moon-Seung | - |
dc.contributor.localauthor | 양문승 | - |
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