Active photonic crystal structures based on zero-dimensional active materials : Er-doped Si and InGaAs QD영차원 이득 매질을 기반으로 한 능동형 광결정 구조

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dc.contributor.advisorLee, Yong-Hee-
dc.contributor.advisor이용희-
dc.contributor.authorChoi, Yong-Seok-
dc.contributor.author최용석-
dc.date.accessioned2011-12-14T07:24:01Z-
dc.date.available2011-12-14T07:24:01Z-
dc.date.issued2004-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=240479&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/47349-
dc.description학위논문(박사) - 한국과학기술원 : 물리학과, 2004.8, [ iv, 106 p. ]-
dc.description.abstractThe generation of coherent light field and its interplay with a matter are key issues in quantum optics and nanophotonics. When the system is implemented in such a small dimension as the cubic-wavelength-sized scale, its dynamic process strongly reflects the nature of a quantum system and provides an indispensable way to study the nonclassical properties of light and its interaction with a matter. This thesis reports the experimental efforts to construct the high-$Q$ photonic-crystal (PC) nanocavities, which localize light in the mode volume of cubic wavelengths, based on zero-dimensional active materials that confine an electron or single electron-hole pairs. We start by describing the properties of PC structures based on erbium-doped silicon-based materials (Er-doped Si``s). The extremely slow core-level transition of Er$^{3+}$ in Si-based photonic crystals was found to be insensitive to any nonradiative processes at the surface. A clear enhancement of Er$^{3+}$ transition was demonstrated by a modification of local density of states with thin films of various refractive indices. Both observations suggest the feasibility of achieving a large Purcell enhancement. However, a relative low refractive index is an impediment to be resolved for a PC nanocavity as well as a band gap itself. The high-$Q$ PC nanocavities with an atom-like active material was realized based on indium-gallium-arsenide quantum dots (InGaAs QDs). In this system, the large material gain of InGaAs QDs and Purcell enhancement can lead to the advent of a thresholdless laser and a high bit-rate single-photon source. Major concerns were to establish a reliable scheme to fabricate high-$Q$ PC nanocavities and to characterize them in comparision with numerical calculations. The laser-like oscillation in a PC stick resonator, which allows as small mode volume as a PC unit-cell resonator does, demonstrates the possibility of a room-temperature lasing operation in the mesoscopic level of $\si...eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectINGAAS QUANTUM DOT-
dc.subjectPHOTONIC CRYSTAL-
dc.subjectER-DOPED SILICONR-
dc.subject어븀 첨가 실리콘원격 이동이저-
dc.subject인듐갈륨아세나이드 양자점-
dc.subject광결정-
dc.subjectNANO FABRICATIONRTATION-
dc.titleActive photonic crystal structures based on zero-dimensional active materials-
dc.title.alternative영차원 이득 매질을 기반으로 한 능동형 광결정 구조-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN240479/325007 -
dc.description.department한국과학기술원 : 물리학과, -
dc.identifier.uid020005329-
dc.contributor.localauthorChoi, Yong-Seok-
dc.contributor.localauthor최용석-
dc.title.subtitleEr-doped Si and InGaAs QD-
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PH-Theses_Ph.D.(박사논문)
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