First-principles study of defect properties in ZnO and $SiO_2$ZnO 및 $SiO_2$ 내의 결함 특성에 관한 제일원리 연구

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dc.contributor.advisorChang, Kee-Joo-
dc.contributor.advisor장기주-
dc.contributor.authorLee, Eun-Cheol-
dc.contributor.author이은철-
dc.date.accessioned2011-12-14T07:23:36Z-
dc.date.available2011-12-14T07:23:36Z-
dc.date.issued2003-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=231005&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/47323-
dc.description학위논문(박사) - 한국과학기술원 : 물리학과, 2003.8, [ viii, 61 p. ]-
dc.description.abstractBased on first-principles density functional calculations, we present a mechanism for the compensation of N acceptors in ZnO through real-space multigrid electronic structure calculations. We find that at low N doping levels using a normal $N_2$ source, O vacancies are the main compensating donors for N acceptors, while N acceptors are compensated via the formation of defect complexes with Zn antisites at high doping levels. When an active plasma $N_2$ gas is used to increase the N solubility, N acceptors are still greatly compensated by $N_2$ molecules at oxygen sites and N-acceptor-$N_2$ complexes, explaining the difficulty in achieving low-resistivity ρ-type ZnO. In ZnO codoped with N acceptors and Ga donors, the acceptor level of a N-Ga-N complex is similar to that for an isolated N acceptor, and hole concentrations are not enhanced due to the compensation by Ga donors. We suggest a method for fabricating ρ-type ZnO by using group I impurities such as Li and Na. The substitutional Li and Na are found to be shallower acceptors than the N acceptor, but they are severely compensated by Li and Na interstitials, respectively. However, a codoping of H with Li or Na greatly suppresses the formation of the compensating interstitials and increase the acceptor solubility by forming acceptor-H-interstitial complexes. We find that the H incorporated in Li- and Na-doped ZnO can be easily removed, thus, the low-resistive ρ-type ZnO is expected to be fabricated by controlling the doping level of H. We find that Co-doped ZnO energetically favors a spin-glass-like state due to antiferromagnetic interactions between transition metal atoms, while ferromagnetic ordering is stabilized via double exchange interactions by electron doping. We find a short range nature in both antiferromagnetic and ferromagnetic interactions, unlike the Ruderman-Kittel-Kasuya-Yosida interaction, and suggest that a very high doping level of Co ions is required to achieve ferromagnetism, together wit...eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectZnO-
dc.subject규소 산화물-
dc.subject아연 산화물-
dc.titleFirst-principles study of defect properties in ZnO and $SiO_2$-
dc.title.alternativeZnO 및 $SiO_2$ 내의 결함 특성에 관한 제일원리 연구-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN231005/325007 -
dc.description.department한국과학기술원 : 물리학과, -
dc.identifier.uid020005239-
dc.contributor.localauthorLee, Eun-Cheol-
dc.contributor.localauthor이은철-
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