DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Shin, Jung-H. | - |
dc.contributor.advisor | 신중훈 | - |
dc.contributor.author | Kim, Mun-Jun | - |
dc.contributor.author | 김문준 | - |
dc.date.accessioned | 2011-12-14T07:23:21Z | - |
dc.date.available | 2011-12-14T07:23:21Z | - |
dc.date.issued | 2003 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=180932&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/47307 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 물리학과, 2003.2, [ viii, 66 p. ] | - |
dc.description.abstract | Ever since the demonstration by H. Ennen et al. that erbium-doped silicon shows luminescence near 1.54 ㎛ due to the intra-4f transition ($^4I_{13/2}$ → $^4I_{15/2}$) of $Er^{3+}$, erbium-doping of silicon has been the subject of intense research since it promises the possibility of establishing a silicon-based optoelectronic technology. In this thesis, we have investigated erbium-doping of hydrogenated amorphous silicon (a-Si:H), which is a promising alternative to crystalline silicon (c-Si) for erbium-doping. We have prepared erbium-doped a-Si:H thin films using electron cyclotron resonance plasma enhanced chemical vapor deposition of $SiH_4$ with concurrent sputtering of erbium, which enables to deposit device-quality films with good optical activity of erbium and with low structural disorder, avoiding excessive contamination. Erbium-doping introduces defect states, and that above a concentration of 0.27 at. %. induces strong structural disorder. And also, erbium-doping introduces non-radiative decay paths for carriers in a-Si:H, leading to decrease in both the $Er^{3+}$ and intrinsic a-Si:H luminescence intensity when the Er concentration is increased to more than 0.04 at. %. $Er^{3+}$ luminescence intensity shows a little temperature quenching, and its temperature dependence shows a different behavior from both the intrinsic a-Si:H and the defect luminescence. Considering all results, we argue that luminescent mechanisms relevant to erbum-doped c-Si should be considered in case of erbium-doped a-Si:H as well. And based on the analysis of the temperature dependence of the $Er^{3+}$ luminescence decay time, we identify interaction with the defect state near the mid-gap as the possible back-transfer channel. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | hydrogenated amorphous silicon | - |
dc.subject | Erbium luminescence | - |
dc.subject | trap-mediated Auger-excitation | - |
dc.subject | 수소화된 비정질 실리콘 | - |
dc.subject | 어븀 발광 | - |
dc.subject | back-transfer | - |
dc.title | Erbium doped hydrogenated amorphous silicon | - |
dc.title.alternative | 어븀이 도핑된 수소화된 비정질 실리콘에서의 어븀의 발광 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 180932/325007 | - |
dc.description.department | 한국과학기술원 : 물리학과, | - |
dc.identifier.uid | 000985051 | - |
dc.contributor.localauthor | Kim, Mun-Jun | - |
dc.contributor.localauthor | 김문준 | - |
dc.title.subtitle | excitation and de-excitation of $Er^{3+}$ | - |
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