분광타원계측에 의한 나노미터 두께 게이트 산화막의 광특성 측정 연구Measurement of optical properties of nanometer-thick gate oxide films by spectroscopic ellipsometry
- Advisors
- 김병윤researcher; Kim, Byoung-Yoonresearcher
- Description
- 한국과학기술원 : 물리학과,
- Publisher
- 한국과학기술원
- Issue Date
- 2001
- Identifier
- 169564/325007 / 000925368
- Language
- kor
- Description
학위논문(박사) - 한국과학기술원 : 물리학과, 2001.8, [ ix, 102 p. ]
- Keywords
광학상수; 이산화규소 박막; 게이트 산화막; 타원계측; Sellmeier 함수; Sellmeier function; optical constants; silicon dioxide film; gate oxide; ellipsometry
- Appears in Collection
- PH-Theses_Ph.D.(박사논문)
- Files in This Item
- There are no files associated with this item.
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