| 1 | Quantum Mechanical Simulation of Hole Transport in p-Type Si Schottky Barrier MOSFETs Choi, Wonchul; Shin, Mincheol, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, pp.5861 - 5864, 2011-07 |
| 2 | Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.106, no.5, 2009-09 |
| 3 | Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
| 4 | Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.97, no.9, pp.092108, 2010-08 |
| 5 | Quantum simulation of device characteristics of silicon nanowire FETs Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.6, no.2, pp.230 - 237, 2007-03 |
| 6 | Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors Shin, Mincheol; Lee, Jaehyun; Ahn, Chiyui, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5389 - 5392, 2008-10 |
| 7 | Non-equilibrium Greens function approach to three-dimensional carbon nanotube field effect transistor Simulations Shin, Mincheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1287 - 1291, 2008-04 |
| 8 | Quantum simulation of coaxially gated CNTFETs by using an effective mass approach Ahn, C; Shin, Mincheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1887 - 1893, 2007-06 |
| 9 | p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01 |
| 10 | Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors Jung, Hyo Eun; Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.118, no.19, pp.195703-1 - 195703-7, 2015-11 |
