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Results 1-2 of 2 (Search time: 0.004 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

Goh, Youngin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.113, no.5, 2018-07

2
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

Goh, Youngin; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.33, 2018-08

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