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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Fast transient charging behavior of HfInZnO thin-film transistor Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.9, 2015-08 | |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 | |
| Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor Woo, Hyunsuk; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-08 | |
| Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors Jung, Hyo Eun; Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.118, no.19, pp.195703-1 - 195703-7, 2015-11 | |
| Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.17, 2018-04 | |
| Leakage current limit of time domain reflectometry in ultrathin dielectric characterization Kim, Yonghun; Baek, Seung Heon; Jeon, Chang Hoon; Lee, Young Gon; Kim, Jin Ju; Jung, Ukjin; Kang, Soo Cheol; Park, Woojin; Lee, Seok-Hee; Lee, Byoung Hun, JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.8, pp.37 - 41, 2014-08 |
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