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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.97, no.9, pp.092108, 2010-08 | |
Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors Jung, Hyo Eun; Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.118, no.19, pp.195703-1 - 195703-7, 2015-11 | |
A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction Lee, Jaehyun; Kim, Seungchul; Shin, Mincheol, APPLIED PHYSICS LETTERS, v.110, no.23, 2017-06 |
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