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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors Shin, Mincheol; Lee, Jaehyun; Ahn, Chiyui, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5389 - 5392, 2008-10
2	p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01
3	A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction Lee, Jaehyun; Kim, Seungchul; Shin, Mincheol, APPLIED PHYSICS LETTERS, v.110, no.23, 2017-06

Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)

Shin, Mincheol; Lee, Jaehyun; Ahn, Chiyui, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5389 - 5392, 2008-10

Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01

Lee, Jaehyun; Kim, Seungchul; Shin, Mincheol, APPLIED PHYSICS LETTERS, v.110, no.23, 2017-06

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