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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 | |
| The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05 | |
| Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04 | |
| Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; Park, Wan Woo; Park, Sang-Hee Ko; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.42, pp.36962 - 36970, 2017-10 |
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