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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 | |
| Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor Woo, Hyunsuk; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-08 | |
| Amorphous Oxide Semiconductor TFTs for Displays and Imaging Nathan, Arokia; Lee, Sungsik; Jeon, Sanghun; Robertson, John, JOURNAL OF DISPLAY TECHNOLOGY, v.10, no.11, pp.917 - 927, 2014-11 | |
| Anomalous high photoconductivity in short channel indium-zinc-oxide photo-transistors Choi, Hyun-Sik; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.106, no.1, 2015-01 | |
| Impact of transparent electrode on photoresponse of ZnO-based phototransistor Lee, Seunghyup; Ahn, Seung-Eon; Jeon, Yongwoo; Ahn, Ji-Hoon; Song, Ihun; Jeon, Sanghun; Yun, Dong-Jin; Kim, Jungwoo; Choi, Hyung; Chung, U-In; Park, Jaechul, APPLIED PHYSICS LETTERS, v.103, no.25, 2013-12 | |
| Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.17, 2018-04 |
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