Browse "EE-Journal Papers(저널논문)" by Subject tunneling
Showing results 1 to 8 of 8
| Analysis of 1/f noise in LWIR HgCdTe photodiodes Bae, SH; Lee, SJ; Kim, YH; Lee, Hee Chul; Kim, Choong Ki, JOURNAL OF ELECTRONIC MATERIALS, v.29, no.6, pp.877 - 882, 2000-06 |
| Analysis of Transconductance (g(m)) in Schottky-Barrier MOSFETs Choi, Sung-Jin; Choi, Chel-Jong; Kim, Jee-Yeon; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.2, pp.427 - 432, 2011-02 |
| Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation Loh, WY; Cho, Byung Jin; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12 |
| Cryogenic Storage Memory with High-Speed, Low-Power, and Long-Retention Performance Hur, Jae; Kang, Dongsuk; Moon, Dong-Il; Yu, Jiman; Choi, Yang-Kyu; Shimeng, Yu, ADVANCED ELECTRONIC MATERIALS, v.9, no.6, 2023-06 |
| Electronic transport properties of coupled single-electron transistors Shin, Mincheol; Lee, S; Park, KW; Kim, GH, SOLID STATE COMMUNICATIONS, v.116, no.10, pp.527 - 532, 2000 |
| Localized oxide degradation in ultrathin gate dielectric and its statistical analysis Loh, WY; Cho, Byung Jin; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04 |
| Metal-oxide-semiconductor field effect transistor using oxidized mu c-Si/ultrathin oxide gate structure Baik, SJ; Choi, JH; Lee, JeongYong; Lim, Koeng Su, SUPERLATTICES AND MICROSTRUCTURES, v.28, no.5-6, pp.477 - 483, 2000 |
| Quantum vortex creep: Hall and dissipative tunneling Kim, GH; Shin, Mincheol, PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, v.303, no.1-2, pp.73 - 80, 1998-07 |
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