Browse "EE-Journal Papers(저널논문)" by Subject semiconductor lasers
Showing results 1 to 7 of 7
| A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser Kim, HD; Kang, SG; Lee, Chang-Hee, IEEE PHOTONICS TECHNOLOGY LETTERS, v.12, no.8, pp.1067 - 1069, 2000-08 |
| Improvement of catastrophic optical damage (COD) level for high-power 0.98-mu m GaInAs-GaInP laser diodes using impurity induced layer disordering Lee, JK; Park, KH; Jang, DH; Cho, HS; Park, Chul Soon; Pyun, KE; Jeong, J, IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.9, pp.1226 - 1228, 1998-09 |
| Limit of optical pulsewidth in the gain-switched DFB semiconductor laser Cho, SD; Lee, Chang-Hee; Shin, Sang Yung, IEEE PHOTONICS TECHNOLOGY LETTERS, v.11, no.7, pp.782 - 784, 1999-07 |
| Parametric amplification in a directly modulated semiconductor laser Cho, SD; Lee, Chang-Hee; Shin, SY, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.40, no.7A, pp.675 - 677, 2001-07 |
| Polarization characteristics of index-guided surface-emitting lasers with tilted pillar structure Chu, HY; Yoo, BS; Park, MS; Park, HyoHoon, IEEE PHOTONICS TECHNOLOGY LETTERS, v.9, no.8, pp.1066 - 1068, 1997 |
| Square ring laser diode with MMI coupler cavity Kim, HS; Kwon, YS; Hong, Songcheol, IEEE PHOTONICS TECHNOLOGY LETTERS, v.9, no.5, pp.584 - 586, 1997-05 |
| Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer Yoo, BS; Chu, HY; Park, HyoHoon; Lee, HG; Lee, JJ, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.33, no.10, pp.1794 - 1800, 1997 |
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