Browse "EE-Journal Papers(저널논문)" by Subject high-kappa
Showing results 1 to 11 of 11
| A high performance MIM capacitor using HfO(2) dielectrics Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jin; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09 |
| Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications Zhu, CX; Cho, Byung Jin; Li, MF, CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171, 2006-03 |
| Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant He, Wei; Zhang, Lu; Chan, Daniel S. H.; Cho, BJ; Zhang, L; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625, 2009-06 |
| Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning Park, CS; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.796 - 798, 2005-11 |
| Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric Kim, SJ; Cho, Byung Jin; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08 |
| MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02 |
| MOS characteristics of substituted Al gate on high-kappa dielectric Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11 |
| MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2 Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09 |
| Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01 |
| Tensile-strained germanium CMOS integration on silicon Zang, H; Loh, WY; Ye, JD; Lo, GQ; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119, 2007-12 |
| Thermal instability of effective work function in metal/high-kappa stack and its material dependence Joo, MS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11 |
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