Browse "EE-Journal Papers(저널논문)" by Subject high-electron-mobility transistor (HEMT)

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Monolithic integration of InP-Based HEMT and MSM photodiode using InGaAsP (lambda=1.3 mu m) buffer

Cha, JH; Kim, JH; Kim, CY; Shin, SH; Kwon, Young Se, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.4B, pp.2549 - 2552, 2005

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