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Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films Oh, Changyong; Tewari, Amit; Kim, Kyungkwan; Kumar, Ulayil Sajesh; Shin, Changhwan; Ahn, Minho; Jeon, Sanghun, NANOTECHNOLOGY, v.30, no.50, 2019-10 |
Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing Woo, Jiyong; Goh, Youngin; Im, Solyee; Hwang, Jeong Hyeon; Kim, Yeriaron; Kim, Jeong Hun; Im, Jong-Pil; et al, IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.232 - 235, 2020-02 |
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