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| Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility Jung, Seungjae; Kong, Jaemin; Song, Sunghoon; Lee, Kwanghee; Lee, Takhee; Hwang, Hyunsang; Jeon, Sanghun, MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1143 - 1147, 2011-07 |
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