Browse "EE-Journal Papers(저널논문)" by Subject RANDOM-ACCESS MEMORY
Showing results 1 to 6 of 6
| A Low-Power TDC-Configured Logarithmic Resistance Sensor for MLC PCM Readout Kwon, Ji-Wook; Jin, Dong-Hwan; Kim, Hyeon-June; Hwang, Sun-Il; Shin, Min-Chul; Cheon, Jun-Ho; Ryu, Seung-Tak, IEEE SENSORS JOURNAL, v.16, no.14, pp.5524 - 5535, 2016-07 |
| Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices Kim, Sung Kyu; Kim, Jong Yoon; Jang, Byung Chul; Cho, Mi Sun; Choi, Sung-Yool; Lee, Jeong Yong; Jeong, Hu-Young, ADVANCED FUNCTIONAL MATERIALS, v.26, no.41, pp.7406 - 7414, 2016-11 |
| Multilevel States of Nano-Electromechanical Switch for a PUF-Based Security Device Hwang, Kyu-Man; Kim, Wu-Kang; Jin, Ik Kyeong; Lee, Seung-Wook; Choi, Yang-Kyu, SMALL, v.15, no.3, 2019-01 |
| Nonvolatile Memories Based on Graphene and Related 2D Materials Bertolazzi, Simone; Bondavalli, Paolo; Roche, Stephan; San, Tamer; Choi, Sung-Yool; Colombo, Luigi; Bonaccorso, Francesco; et al, ADVANCED MATERIALS, v.31, no.10, pp.1806663, 2019-03 |
| Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; Jung, Minhyun; Kim, Chaeheon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09 |
| Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu-Se-based atomic switch Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghun, JOURNAL OF ALLOYS AND COMPOUNDS, v.753, pp.551 - 557, 2018-07 |
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