Browse "EE-Journal Papers(저널논문)" by Subject N2O
Showing results 1 to 3 of 3
| Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ultralarge scale integration complementary metal oxide semiconductor applications Yoon, Giwan; Epstein, Y, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.145, no.5, pp.1679 - 1683, 1998-05 |
| Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity Cho, Byung Jin; Ko, LH; Nga, YA; Chan, LH, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.11, pp.4259 - 4262, 1999-11 |
| Metal-oxide-semiconductor characteristics of NH3-nitrided N2O-annealed oxides fabricated at reduced pressure Yoon, Giwan; Epstein, Y, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2045 - 2049, 2000-04 |
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