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Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer Park, Jong Kyung; Lee, Seok-Hee; Oh, Jae Sub; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung Jin, APPLIED PHYSICS EXPRESS, v.5, no.8, 2012-08 |
Interface engineering for high performance graphene electronic devices Jung, Dae Yool; Yang, Sang Yoon; Park, Hamin; Shin, Woo-Cheol; Oh, Joong Gun; Cho, Byung-Jin; Choi, Sung-Yool, NANO CONVERGENCE, v.2, no.11, pp.1 - 17, 2015-06 |
Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
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