Browse "EE-Journal Papers(저널논문)" by Subject HGCDTE
Showing results 1 to 5 of 5
| Behavior of elemental tellurium as surface generation-recombination centers in CdTe/HgCdTe interface Lee, MY; Lee, YS; Lee, Hee Chul, APPLIED PHYSICS LETTERS, v.88, pp.103 - 109, 2006-05 |
| Characteristics of gradually doped LWIR diodes by hydrogenation Kim, Y.-H.; Kim, T.-S.; Redfern, D.A.; Musca, C.A.; Lee, Hee Chul; Kim, Choong Ki, JOURNAL OF ELECTRONIC MATERIALS, v.29, no.6, pp.859 - 864, 2000-06 |
| Characterization of vacuum evaporated polycrystalline Cd0.96Zn0.04Te thin films by XRD, Raman scattering and spectroscopic ellipsometry Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, CRYSTAL RESEARCH AND TECHNOLOGY, v.37, no.9, pp.964 - 975, 2002 |
| Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment Agnihotri, OP; Pal, R; Yang, KD; Bae, SH; Lee, SJ; Lee, MY; Choi, WS; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.7A, pp.4500 - 4502, 2002-07 |
| X-ray diffraction and Raman scattering studies in B-10(+)-implanted Cd0.96Zn0.04Te thin films prepared by vacuum evaporation Sridharan, M; Narayandass, SK; Mangalaraj, D; Lee, Hee Chul, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.14, pp.69 - 73, 2003-02 |
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