Browse "EE-Journal Papers(저널논문)" by Subject HEXAGONAL BORON-NITRIDE
Showing results 1 to 11 of 11
| A review of optics-based methods for thickness and surface characterization of two-dimensional materials Jin, Yeonghoon; Yu, Kyoungsik, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.54, no.39, 2021-09 |
Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN Kim, Gwangwoo; Yeol, Kyung; Park, Minsu; Kim, Minsu; Jeon, Jonghyuk; Song, Jinouk; Barrios-Vargas, Jose Eduardo; et al, NATURE COMMUNICATIONS, v.11, no.1, pp.5359, 2020-10 |
| Desolvation-Triggered Versatile Transfer-Printing of Pure BN Films with Thermal-Optical Dual Functionality Han, Yujin; Han, Hyeuk Jin; Rah, Yoonhyuk; Kim, Cheolgyu; Kim, Moohyum; Lim, Hunhee; Ahn, Kwang Ho; et al, ADVANCED MATERIALS, v.32, no.38, pp.2002099, 2020-09 |
| Flexible and Transparent Thin Film Transistor Based on 2D Materials for Active-Matrix Display Park, Hamin; Oh, Dong Sik; Lee, Khang June; Jung, Dae Yool; Lee, Seunghee; Yoo, Seunghyup; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.4749 - 4754, 2020-01 |
| High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy Oh, Joong Gun; Hong, Seul Ki; Kim, Choong-Ki; Bong, Jae Hoon; Shin, Jongwoo; Choi, Sung-Yool; Cho, Byung Jin, APPLIED PHYSICS LETTERS, v.104, no.19, 2014-05 |
| High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices Kang, Taeho; Park, Joonho; Jung, Hanggyo; Choi, Haeju; Lee, Sang‐Min; Lee, Nayeong; Lee, Ryong Gyu; et al, ADVANCED MATERIALS, v.36, no.26, 2024-06 |
| Hybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability Park, Hamin; Oh, Dong Sik; Hong, Woonggi; Kang, Juyeon; Lee, Geon-Beom; Shin, Gwang Hyuk; Choi, Yang-Kyu; et al, ADVANCED MATERIALS INTERFACES, v.8, no.14, pp.2100599, 2021-07 |
| Image polaritons in van der Waals crystals Menabde, Sergey G.; Heiden, Jacob T.; Cox, Joel D.; Mortensen, N. Asger; Jang, Min Seok, NANOPHOTONICS, v.11, no.11, pp.2433 - 2452, 2022-01 |
| Improved Electrical Contact Properties of MoS2-Graphene Lateral Heterostructure Hong, Woonggi; Shim, Gi Woong; Yang, SangYoon; Jung, Dae Yool; Choi, Sung-Yool, ADVANCED FUNCTIONAL MATERIALS, v.29, no.6, pp.1807550, 2019-02 |
| Interface engineering for high performance graphene electronic devices Jung, Dae Yool; Yang, Sang Yoon; Park, Hamin; Shin, Woo-Cheol; Oh, Joong Gun; Cho, Byung-Jin; Choi, Sung-Yool, NANO CONVERGENCE, v.2, no.11, pp.1 - 17, 2015-06 |
| Nonvolatile Memories Based on Graphene and Related 2D Materials Bertolazzi, Simone; Bondavalli, Paolo; Roche, Stephan; San, Tamer; Choi, Sung-Yool; Colombo, Luigi; Bonaccorso, Francesco; et al, ADVANCED MATERIALS, v.31, no.10, pp.1806663, 2019-03 |
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