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Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film Jeong, Hu Young; Kim, Jong Yun; Yoon, Tae Hyun; Choi, Sung-Yool, CURRENT APPLIED PHYSICS, v.10, no.1, pp.E46 - E49, 2010-01 |
Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device Kim, Jong Yun; Jeong, Hu Young; Kim, Jeong Won; Yoon, Tae Hyun; Choi, Sung-Yool, CURRENT APPLIED PHYSICS, v.11, no.2, pp.35 - 39, 2011-03 |
Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory Nho, Hyun Woo; Kim, Jong Yun; Wang, Jian; Shin, Hyun-Joon; Choi, Sung-Yool; Yoon, Tae Hyun, JOURNAL OF SYNCHROTRON RADIATION, v.21, pp.170 - 176, 2014-01 |
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